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| Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C) Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150 -55 to +150 Unit V 15.00.3 3.00.2 Parameter Collector to base voltage Collector to 2SC5127 2SC5127A 2SC5127 Symbol VCBO VCES VCEO VEBO ICP IC IB 13.7-0.2 +0.5 s Absolute Maximum Ratings 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 emitter voltage 2SC5127A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V V A A A W C C 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package PC Tj Tstg s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC5127 2SC5127A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.6A IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.6A, IB1 = 0.17A, IB2 = - 0.34A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 100 Unit A A V 1 Power Transistors PC -- Ta 40 1.2 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C IB=150mA 1.0 2SC5127/2SC5127A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 25C 0.3 TC=100C 0.1 -25C 0.03 0.01 0.01 0.03 VCE(sat) -- IC Collector power dissipation PC (W) 30 (1) Collector current IC (A) 100mA 0.8 80mA 60mA 0.6 40mA 20 0.4 20mA 10mA 10 (2) (3) (4) 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC Collector output capacitance Cob (pF) IC/IB=5 1000 VCE=5V 1000 Cob -- VCB IE=0 f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) 30 Forward current transfer ratio hFE 300 300 10 100 100 3 TC=-25C 1 100C 0.3 25C 30 25C TC=100C 30 10 -25C 10 3 3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 1 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) fT -- IC 100 VCE=10V f=1MHz TC=25C 100 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=3.5 (2IB1=-IB2) VCC=200V TC=25C ton Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25C t=0.5ms 1 0.3 10ms 0.1 0.03 0.01 0.003 0.001 DC 1ms Transition frequency fT (MHz) Switching time ton,tstg,tf (s) 30 10 3 tstg 1 0.3 10 3 1 tf 0.1 0.03 0.3 0.1 0.01 0.01 0.03 0.1 0.3 1 0 0.5 1.0 1.5 2.0 Collector current IC (A) 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 4.0 3.5 Lcoil=180H IC/IB=5 (IB1=-IB2) TC<100C 2SC5127/2SC5127A Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 800 -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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